The thin film deposition of different materials is one of the most critical steps in the manufacturing process of semiconductor devices. The on-going integration into the third dimension is presenting new and increasingly challenging requirements to the deposition processes. Especially uniformity over the full wafer area and the capability to deposit material uniformly on 3D structures in the nanometer scale are key drivers for new developments and requirements within the semiconductor manufacturing equipment.
The challenges faced in modern deposition processes are uniformity of layers, temperature and gas flow. The need to avoid particle generation and process contamination to achieve high process yields is also of paramount importance.
To address the challenges of uniformity within the process it is crucial to control temperature and gas flow. Gas flow is controlled by tubes with tight dimensional tolerances and optimized design of the quartz ware. For improved thermal management Heraeus offers a unique opaque material solution .
A primary cause of particle generation in plasma-supported deposition processes is linked to the bubble content of the quartz base material. Heraeus has developed a wide portfolio of low bubble content material helping to address this challenge.
Impurities within the quartz ware have become a growing concern due to shrinking node sizes in semiconductor manufacturing. Heraeus manufactures high purity and synthetic quartz materials and fabricated solutions to counter this concern.