Heraeus Black Quartz (HBQ®) is a unique black opaque quartz glass composite that benefits from high purity and other properties of our advanced white opaque (OM®) and clear fused (HSQ®) quartz solutions. HBQ® offers smart answers to individual problems, and new answers to old material challenges. Convince yourself and step into a new world of possibilities with Heraeus Black Quartz.
Heraeus Black Quartz (HBQ®)
Step into a new world of possibilities
A revolutionary hybrid material
Available Product Solutions
The manufacturing method of HBQ® allows it to be manufactured close to the dimensions of the finished component. This reduces excess material and lowers machining steps. This improved efficiency in manufacturing contributes to a lower cost for the finished part.
For available dimensions and possible maximal dimensions please contact us.
Round
Rectangular
Ring
Benefits of HBQ®
Over 95% absorption is achieved in a wide range of wavelengths from UV through VIS to MWIR in as little as 3mm of thickness. Over 80% absorption is achieved already at a thickness of just 1mm.
Values for emissivity close to a black body emitter are achieved at elevated temperatures. Over a wide range of wavelength the emissivity is between 80% and 90%. Between 2.6µm and 2.7µm reaching 95%. HBQ® represents a new option as black body emitter.
Despite the high emissivity, HBQ® offers a very low thermal conductivity, defined by the SiO2 nature of the material. The thermal conductivity is as low as 1.5 W/mK. This offers unique application benefits, e.g. in semiconductor process chambers, adding a degree of freedom in thermal management, where heat dissipation is an issue.
The total level of impurities in HBQ® is <50 ppm, resulting in a bulk purity of >99.995%. Even for the most sensitive leading-edge semiconductor applications HBQ® is a qualified and viable material solution. HBQ® is free of carbon and problem metals like Iron, Titanium, Tungsten, Chrome or Nickel.
Compared to the alternative black ceramic materials like SiC or AlN, HBQ® is faster and more economical when comparing machining time and tool wear. This gives HBQ® the opportunity to significantly reduce your total cost of ownership.
Analogous to clear fused quartz material HBQ® is inert to most chemical acids and solvents. For example no reaction is seen with HCl, HNO3 or gases like Cl2, H2 or O2. In almost any atmosphere HBQ® can be used at temperatures up to 1300°C safely and reliably.
Possible Applications
- Semiconductor applications for single and multi-wafer process chambers HBQ Wafer
- Thermal homogenization of process environment
- Blocking of radiation from certain process environments
- Heating element covers, shielding plates, pedestal plates, dummy wafers, wafer holders, etc.
Technical Data
| HBQ® | |
|---|---|
| General properties |
Density: 2.19 g/cm3 Porosity: <0.5% Pore size: <10µm |
| Electrical properties |
Resistivity (20°C): >1015 Ω∙m Resistivity (1200°C): >1000 Ω∙m Type: Insulator Dielectric constant (εr) @ 13,56 MHz: 3.82 |
| Mechanical properties |
Tensile strength: 50 MPa Flexural strength: 84 MPa Compressive strength: >1000 MPa Young modulus: 54 GPa |
| Thermal properties |
Thermal expansion (20-200°C): 0,57 x 10-6 K-1 Thermal conductivity (20°C): 1.49 W∙m-1∙K-1 Max. working temperature: 1160 °C (long), 1300 °C (short) Emissivity @ 1000°C: 80-90% |